Библиографическая ссылка на патент
Pat. 10804225 United States, Int. Cl.22 H01L 23/02, G11C 5/14, H01L 23/00, H01L 23/64, H01L 25/07, H01L 25/18, H02M 7/00, G11C 11/4072, G11C 11/4074, G11C 11/408. Power gate circuits for semiconductor devices : Appl. N 16/532140 : Filed 05.08.2019 : Pub. 13.10.2020 : / Yasushi Matsubara ; Assignee Micron Technology Inc ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10804225/en?oq=US10804225.html (дата обращения: ДД.ММ.ГГГГ).