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Pat. 10833575 United States, Int. Cl.22 H02M 1/08, H02M 1/15, H02M 1/44, H02M 3/335, H02M 1/00. Method of forming a semiconductor device : Appl. N 16/226196 : Filed 19.12.2018 : Pub. 10.11.2020 : / Martin Podzemny, Vaclav Peroutka ; Assignee Semiconductor Components Industries LLC ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10833575/en?oq=US10833575.html (дата обращения: ДД.ММ.ГГГГ).