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Pat. 10833589 United States, Int. Cl.22 H02M 3/158, H02M 1/36, H02M 1/38, H03F 3/217, H03F 3/38, H03K 17/16, H03K 17/687. Power transistor control signal gating : Appl. N 16/292315 : Filed 04.03.2019 : Pub. 10.11.2020 : / Santosh Sharma, Thomas Ribarich, Victor Sinow, Daniel Marvin Kinzer ; Assignee Navitas Semiconductor Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10833589/en?oq=US10833589.html (дата обращения: ДД.ММ.ГГГГ).