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Pat. 10861955 United States, Int. Cl.22 H01L 29/66, H01L 29/06, H01L 29/40, H01L 29/739, H02M 7/219. Fabrication methods of insulated gate bipolar transistors : Appl. N 16/680653 : Filed 12.11.2019 : Pub. 08.12.2020 : / Lei Bing Yuan ; Assignee Semiconductor Manufacturing International Shanghai Corp, Semiconductor Manufacturing International Beijing Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10861955/en?oq=US10861955.html (дата обращения: ДД.ММ.ГГГГ).