Библиографическая ссылка на патент

Pat. 10924107 United States, Int. Cl.22 H03K 3/00, H01L 23/31, H02M 3/07, H03K 17/06, H03K 17/687. Low static current semiconductor device : Appl. N 16/830458 : Filed 26.03.2020 : Pub. 16.02.2021 : / Chan-Hong Chern, Chu Fu Chen, Chun Lin Tsai, Mark Chen, King-Yuen Wong, Ming-Cheng Lin, Tysh-Bin Liu ; Assignee Taiwan Semiconductor Manufacturing Co Tsmc Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10924107/en?oq=US10924107.html (дата обращения: ДД.ММ.ГГГГ).
Яндекс.Метрика