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Pat. 10950435 United States, Int. Cl.22 C30B 25/14, C30B 29/36, H01L 21/02, H01L 29/06, H01L 29/16, H02M 7/44, H01L 29/78, H01L 29/872, H02P 27/06. SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatus : Appl. N 16/474161 : Filed 06.04.2017 : Pub. 16.03.2021 : / Kenichi Hamano, Akihito Ohno, Takuma Mizobe, Yasuhiro Kimura, Yoichiro Mitani ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10950435/en?oq=US10950435.html (дата обращения: ДД.ММ.ГГГГ).