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Pat. 10985284 United States, Int. Cl.22 H01L 29/872, H01L 21/761, H01L 29/06, H01L 29/20, H01L 29/205, H01L 29/40, H01L 29/66, H01L 29/778, H01L 29/861, H02M 7/00. High-voltage lateral GaN-on-silicon schottky diode with reduced junction leakage current : Appl. N 15/223677 : Filed 29.07.2016 : Pub. 20.04.2021 : / Timothy E. Boles, Douglas Carlson, Anthony Kaleta ; Assignee Macom Technology Solutions Holdings Inc ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10985284/en?oq=US10985284.html (дата обращения: ДД.ММ.ГГГГ).