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Pat. 10991822 United States, Int. Cl.22 H01L 29/78, H01L 21/8234, H01L 27/06, H01L 29/06, H01L 29/16, H01L 29/417, H01L 29/47, H01L 29/872, H02M 7/5387, H02P 27/08. Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the same : Appl. N 16/477119 : Filed 22.02.2018 : Pub. 27.04.2021 : / Yuichi Nagahisa, Shiro Hino, Koji Sadamatsu, Hideyuki Hatta, Kotaro Kawahara ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10991822/en?oq=US10991822.html (дата обращения: ДД.ММ.ГГГГ).