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Pat. 11038467 United States, Int. Cl.22 H03F 3/04, H02M 7/12, H03F 1/02, H03F 3/21, G01R 19/00, G06G 7/24, H03G 7/00. Power detector with all transistors being bipolar junction transistors : Appl. N 16/584897 : Filed 26.09.2019 : Pub. 15.06.2021 : / Hwey-Ching Chien ; Assignee Richwave Technology Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11038467/en?oq=US11038467.html (дата обращения: ДД.ММ.ГГГГ).