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Pat. 11063122 United States, Int. Cl.22 H01L 29/16, H01L 29/47, H01L 29/78, H01L 29/868, H01L 29/872, H02M 7/5387. Silicon carbide semiconductor device and power conversion device : Appl. N 16/323642 : Filed 24.10.2017 : Pub. 13.07.2021 : / Yusuke Yamashiro, Kazuyuki Sugahara, Hiroshi Watanabe, Kohei Ebihara ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11063122/en?oq=US11063122.html (дата обращения: ДД.ММ.ГГГГ).