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Pat. 11094807 United States, Int. Cl.22 H01L 29/739, H02M 1/088, H02M 1/32, H02M 3/158. Anti-aging architecture for power MOSFET device : Appl. N 16/561670 : Filed 05.09.2019 : Pub. 17.08.2021 : / Alberto Cattani, Alessandro Gasparini ; Assignee Stmicroelectronics Srl ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11094807/en?oq=US11094807.html (дата обращения: ДД.ММ.ГГГГ).