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Pat. 11094813 United States, Int. Cl.22 H01L 29/778, H01L 29/51, H01L 29/66, H02M 1/42, H02M 3/335, H03F 3/21. Compound semiconductor device, method of manufacturing compound semiconductor device, and amplifier : Appl. N 16/733270 : Filed 03.01.2020 : Pub. 17.08.2021 : / Kozo Makiyama ; Assignee Fujitsu Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11094813/en?oq=US11094813.html (дата обращения: ДД.ММ.ГГГГ).