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Pat. 11107756 United States, Int. Cl.22 H01L 23/498, H01L 21/56, H01L 23/00, H01L 23/31, H01L 25/07, H02M 7/00, H02M 7/5387, H01L 23/14, H02P 27/08. Semiconductor device and method for manufacturing the same, and power conversion device : Appl. N 16/489776 : Filed 06.12.2017 : Pub. 31.08.2021 : / Yusuke Kaji, Hodaka Rokubuichi, Satoshi Kondo ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11107756/en?oq=US11107756.html (дата обращения: ДД.ММ.ГГГГ).