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Pat. 11107760 United States, Int. Cl.22 H01L 21/48, H01L 23/00, H01L 23/14, H01L 23/367, H01L 23/498, H02M 1/08, H02M 7/5387, H01L 23/31, H02P 27/08. Semiconductor device, electric power conversion apparatus and method for manufacturing semiconductor device : Appl. N 16/452001 : Filed 25.06.2019 : Pub. 31.08.2021 : / Daisuke Murata, Hiroshi Yoshida, Hidetoshi Ishibashi ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11107760/en?oq=US11107760.html (дата обращения: ДД.ММ.ГГГГ).