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Pat. 11108395 United States, Int. Cl.22 G01C 11/00, G11C 5/02, G11C 7/06, G11C 7/10, G11C 11/16, G11C 16/08, G11C 16/14, G11C 16/16, G11C 16/24, G11C 16/26, H03K 3/356, H03K 17/16, H03K 17/687, H03K 19/00, H03K 19/0185, H03K 19/0944, G05F 3/26, H02M 3/07. Memory cell and memory cell array of magnetoresistive random access memory operated by negative voltage : Appl. N 16/822983 : Filed 18.03.2020 : Pub. 31.08.2021 : / Chia-Fu Chang ; Assignee Ememory Technology Inc ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11108395/en?oq=US11108395.html (дата обращения: ДД.ММ.ГГГГ).