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Pat. 11114836 United States, Int. Cl.22 H02H 3/00, H01L 23/049, H01L 23/31, H01L 23/498, H01L 27/02, H01L 29/16, H01L 29/20, H01L 29/739, H01L 29/861, H02H 3/08, H02H 3/20, H02H 5/04, H02H 7/10, H02H 7/22, H02M 7/00, H02M 1/08, H02M 1/32, H02M 7/5387. Semiconductor device, intelligent power module and power conversion apparatus : Appl. N 15/094469 : Filed 08.04.2016 : Pub. 07.09.2021 : / Rei Yoneyama, Fumitaka Tametani, Manabu Matsumoto, Haruhiko Takemoto, Hiroshi Yoshida, Motonobu Joko ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11114836/en?oq=US11114836.html (дата обращения: ДД.ММ.ГГГГ).