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Pat. 11121086 United States, Int. Cl.22 H01L 29/78, H01L 21/285, H01L 21/768, H01L 23/48, H01L 23/528, H01L 29/417, H01L 29/423, H01L 29/45, H01L 29/66, H02M 3/158. Vertical isolated gate field effect transistor integrated in a semiconductor chip : Appl. N 16/716262 : Filed 16.12.2019 : Pub. 14.09.2021 : / Gaspard Hiblot, Geert Van Der Plas ; Assignee Interuniversitair Microelektronica Centrum Vzw Imec ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11121086/en?oq=US11121086.html (дата обращения: ДД.ММ.ГГГГ).