Библиографическая ссылка на патент
Pat. 11121116 United States, Int. Cl.22 H01L 23/36, H01L 23/00, H02M 7/5387, H01L 23/367, H02P 27/08. Manufacturing method of power semiconductor device, power semiconductor device, and power converter : Appl. N 16/672126 : Filed 01.11.2019 : Pub. 14.09.2021 : / Keisuke Kawamoto ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11121116/en?oq=US11121116.html (дата обращения: ДД.ММ.ГГГГ).