Библиографическая ссылка на патент
Pat. 11127651 United States, Int. Cl.22 H01L 23/473, H01L 23/00, H01L 23/31, H01L 23/367, H01L 23/373, H01L 23/433, H01L 23/495, H01L 25/00, H01L 25/11, H01L 25/18, H02M 7/00, H02M 7/5387. High power module semiconductor package with multiple submodules : Appl. N 16/732192 : Filed 31.12.2019 : Pub. 21.09.2021 : / Jie Chang, Huibin Chen, Keunhyuk Lee, Jerome Tysseyre ; Assignee Semiconductor Components Industries LLC ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11127651/en?oq=US11127651.html (дата обращения: ДД.ММ.ГГГГ).