Библиографическая ссылка на патент
Pat. 11133412 United States, Int. Cl.22 H01L 29/78, H01L 23/522, H01L 27/02, H02M 7/537. Integrated circuit devices including vertical field-effect transistors (VFETs) : Appl. N 16/540090 : Filed 14.08.2019 : Pub. 28.09.2021 : / Jung Ho Do ; Assignee Samsung Electronics Co Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11133412/en?oq=US11133412.html (дата обращения: ДД.ММ.ГГГГ).