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Pat. 11145616 United States, Int. Cl.22 H01L 41/193, H01L 23/00, H01L 23/047, H01L 23/373, H01L 25/00, H01L 25/07, H01L 41/047, H01L 41/113, H01L 41/45, H02M 7/00, H02M 7/44, H02P 27/06. Semiconductor device, power conversion apparatus, and method for manufacturing semiconductor device : Appl. N 16/492517 : Filed 22.06.2017 : Pub. 12.10.2021 : / Takumi Shigemoto, Satoru Ishikawa, Yuji Imoto ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11145616/en?oq=US11145616.html (дата обращения: ДД.ММ.ГГГГ).