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Pat. 11152472 United States, Int. Cl.22 H01L 29/24, C23C 16/448, H01L 21/02, H01L 23/367, H01L 29/04, H01L 29/739, H01L 29/778, H01L 29/78, H01L 29/808, H01L 29/872, H01L 33/26, H02M 3/335. Crystalline oxide semiconductor : Appl. N 16/724494 : Filed 23.12.2019 : Pub. 19.10.2021 : / Isao Takahashi, Tatsuya Toriyama, Masahiro Sugimoto, Takashi Shinohe, Hideyuki Uehigashi, Junji Ohara, Fusao Hirose, Hideo Matsuki ; Assignee Denso Corp, Flosfia Inc ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11152472/en?oq=US11152472.html (дата обращения: ДД.ММ.ГГГГ).