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Pat. 11183479 United States, Int. Cl.22 H01L 23/00, H01L 23/053, H02M 7/5387, H02P 27/08. Semiconductor device, method for manufacturing the same, and power conversion device : Appl. N 16/485909 : Filed 29.03.2018 : Pub. 23.11.2021 : / Shohei Ogawa, Junji Fujino, Isao Oshima, Satoru Ishikawa, Takumi Shigemoto ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11183479/en?oq=US11183479.html (дата обращения: ДД.ММ.ГГГГ).