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Pat. 11189720 United States, Int. Cl.22 H01L 29/78, H01L 29/16, H01L 29/417, H01L 29/47, H02M 7/5387, H02P 27/08. Silicon carbide semiconductor device and power converter : Appl. N 16/477099 : Filed 22.02.2018 : Pub. 30.11.2021 : / Hideyuki Hatta, Shiro Hino, Koji Sadamatsu, Yuichi Nagahisa ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11189720/en?oq=US11189720.html (дата обращения: ДД.ММ.ГГГГ).