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Pat. 11195770 United States, Int. Cl.22 H01L 23/31, H01L 21/56, H01L 23/00, H01L 23/29, H01L 23/498, H02M 7/44, B29C 67/04, B29K 63/00, B29L 31/34, H02P 27/08. Method of manufacturing semiconductor device, semiconductor device, and power conversion device : Appl. N 16/558389 : Filed 03.09.2019 : Pub. 07.12.2021 : / Kenta Nakahara, Akitoshi Shirao ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11195770/en?oq=US11195770.html (дата обращения: ДД.ММ.ГГГГ).