Библиографическая ссылка на патент
Pat. 11233126 United States, Int. Cl.22 H01L 29/16, H01L 29/161, H01L 29/165, H01L 29/36, H01L 29/66, H02M 3/135, H02M 3/137, H02M 3/139, H02M 7/48. SiC epitaxial wafer, semiconductor device, and power converter : Appl. N 16/718534 : Filed 18.12.2019 : Pub. 25.01.2022 : / Masashi Sakai, Yoichiro Mitani ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11233126/en?oq=US11233126.html (дата обращения: ДД.ММ.ГГГГ).