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Pat. 11271352 United States, Int. Cl.22 H01R 43/02, H01L 23/498, H01R 4/02, H01R 12/51, H02M 1/08, H02M 7/5387, H05K 1/09, H05K 1/18, H05K 3/32, H01L 29/739. Power semiconductor device and manufacturing method thereof, and power conversion device : Appl. N 16/442755 : Filed 17.06.2019 : Pub. 08.03.2022 : / Yoshiaki Takewaki, Yoshihisa Uchida, Yo Tanaka ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11271352/en?oq=US11271352.html (дата обращения: ДД.ММ.ГГГГ).