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Pat. 11296601 United States, Int. Cl.22 H02M 3/158, H01L 23/482, H01L 23/522, H01L 23/528, H01L 27/06, H01L 29/417, H01L 29/778, H01L 29/872, H02M 1/088, H02M 1/096, H03K 17/687, H01L 27/088, H01L 29/20, H01L 29/861. Power transistor with distributed gate : Appl. N 16/813733 : Filed 09.03.2020 : Pub. 05.04.2022 : / Daniel M. Kinzer ; Assignee Navitas Semiconductor Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11296601/en?oq=US11296601.html (дата обращения: ДД.ММ.ГГГГ).