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Pat. 11322622 United States, Int. Cl.22 H01L 29/786, H01L 27/06, H01L 29/22, H01L 29/417, H01L 29/51, H01L 29/72, H01L 29/739, H02M 3/155. Oxide-based flexible high voltage thin film transistor : Appl. N 16/981464 : Filed 19.03.2019 : Pub. 03.05.2022 : / Yicheng Lu, Wen-Chiang Hong, Xiaolong Du, Yonghui Zhang, Zengxia Mei ; Assignee Rutgers State University of New Jersey ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11322622/en?oq=US11322622.html (дата обращения: ДД.ММ.ГГГГ).