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Pat. 11335785 United States, Int. Cl.22 H01L 29/02, H01L 29/16, H01L 29/20, H01L 29/417, H01L 29/423, H01L 29/66, H01L 29/78, H02M 7/537. Metal oxide semiconductor integrated circuit basic unit : Appl. N 17/126069 : Filed 18.12.2020 : Pub. 17.05.2022 : / Ping Li, Yongbo Liao, Chenxi Peng, Yaosen Li, Ruihong Nie, Ke Feng, Xianghe Zeng, Ruifeng Tang, Jiarui Zou, Zhaoxi Hu, Fan Lin ; Assignee University of Electronic Science and Technology of China ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11335785/en?oq=US11335785.html (дата обращения: ДД.ММ.ГГГГ).