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Pat. 11355627 United States, Int. Cl.22 H01L 29/78, H01L 29/16, H01L 29/417, H01L 29/66, H02M 1/08, H02M 7/5387. Silicon carbide semiconductor device and power converter : Appl. N 16/759731 : Filed 23.08.2018 : Pub. 07.06.2022 : / Yuichi Nagahisa, Shiro Hino, Hideyuki Hatta, Koji Sadamatsu ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11355627/en?oq=US11355627.html (дата обращения: ДД.ММ.ГГГГ).