Библиографическая ссылка на патент
Pat. 11404953 United States, Int. Cl.22 H03K 17/10, H02M 1/00, H02M 1/08, H03K 17/082, H02M 7/5387, H02P 27/08, H03K 17/08. Drive circuit for power semiconductor element and power semiconductor module employing the same : Appl. N 17/290996 : Filed 11.12.2018 : Pub. 02.08.2022 : / Takeshi Horiguchi ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11404953/en?oq=US11404953.html (дата обращения: ДД.ММ.ГГГГ).