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Pat. 11404960 United States, Int. Cl.22 H02M 3/07. Charge pump gate drive circuit for reduction in turn-on switching loss for MOSFETs : Appl. N 17/336684 : Filed 02.06.2021 : Pub. 02.08.2022 : / Handong Gui, Leon M. Tolbert ; Assignee University of Tennessee Research Foundation ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11404960/en?oq=US11404960.html (дата обращения: ДД.ММ.ГГГГ).