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Pat. 11411495 United States, Int. Cl.22 H01L 29/40, H02M 3/156, H03K 17/04, H03K 17/687. Apparatus, system and method of a metal-oxide-semiconductor (MOS) transistor including a split-gate structure : Appl. N 16/909297 : Filed 23.06.2020 : Pub. 09.08.2022 : / Erez Sarig ; Assignee Tower Semiconductor Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11411495/en?oq=US11411495.html (дата обращения: ДД.ММ.ГГГГ).