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Pat. 11424320 United States, Int. Cl.22 H01L 29/10, H01L 29/06, H01L 29/12, H01L 29/24, H01L 29/47, H01L 29/739, H01L 29/778, H01L 29/78, H01L 29/808, H01L 29/812, H01L 29/872, H01L 33/02, H01L 33/26, H02M 3/28. P-type oxide semiconductor and method for manufacturing same : Appl. N 16/313272 : Filed 30.06.2017 : Pub. 23.08.2022 : / Shizuo Fujita, Kentaro Kaneko, Toshimi Hitora, Tomochika Tanikawa ; Assignee Kyoto University ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11424320/en?oq=US11424320.html (дата обращения: ДД.ММ.ГГГГ).