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Pat. 11489445 United States, Int. Cl.22 H02M 3/158, G01R 19/00, G01R 31/40, H02M 1/32, H02M 1/00. Dynamic bias technique for enhanced MOSFET on-resistance based current sensing : Appl. N 17/066128 : Filed 08.10.2020 : Pub. 01.11.2022 : / Yingyi Yan ; Assignee Analog Devices Inc ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11489445/en?oq=US11489445.html (дата обращения: ДД.ММ.ГГГГ).