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Pat. 11502063 United States, Int. Cl.22 H01L 25/07, H01L 23/00, H01L 23/31, H01L 29/16, H01L 29/24, H01L 29/78, H01L 29/861, H01L 29/872, H02M 7/00. Semiconductor device comprising PN junction diode and Schottky barrier diode : Appl. N 17/125795 : Filed 17.12.2020 : Pub. 15.11.2022 : / Keiji Okumura ; Assignee Rohm Co Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11502063/en?oq=US11502063.html (дата обращения: ДД.ММ.ГГГГ).