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Pat. 11509220 United States, Int. Cl.22 H02M 3/158, H02M 3/00. Electronic device with reduced parasitic inductance : Appl. N 16/853082 : Filed 20.04.2020 : Pub. 22.11.2022 : / Tatsuaki Tsukuda ; Assignee Renesas Electronics Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11509220/en?oq=US11509220.html (дата обращения: ДД.ММ.ГГГГ).