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Pat. 11539291 United States, Int. Cl.22 H01F 41/04, H01F 17/00, H01F 17/06, H01F 27/255, H02M 3/155, H02M 3/158, H01F 27/06, H02M 1/00. Method of manufacturing a power semiconductor system : Appl. N 17/074759 : Filed 20.10.2020 : Pub. 27.12.2022 : / Petteri Palm, Frank Daeche, Zeeshan Umar, Andrew Sawle, Maciej Wojnowski, Xaver Schloegel, Josef Hoeglauer ; Assignee Infineon Technologies Austria Ag ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US11539291/en?oq=US11539291.html (дата обращения: ДД.ММ.ГГГГ).