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Pat. 9876012 United States, Int. Cl.22 H01L 21/265, H01L 21/8234, H01L 23/535, H01L 23/62, H01L 27/088, H01L 29/40, H01L 29/06, H01L 29/10, H01L 29/417, H01L 29/45, H01L 29/66, H01L 29/78, H02M 7/00. Single die output power stage using trench-gate low-side and LDMOS high-side MOSFETs, structure and method : Appl. N 14/954854 : Filed 30.11.2015 : Pub. 23.01.2018 : / Francois Hebert ; Assignee Intersil Americas LLC ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US9876012/en?oq=US9876012.html (дата обращения: ДД.ММ.ГГГГ).