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Pat. 9876497 United States, Int. Cl.22 H02M 1/08, H02M 7/217, H02M 7/219, H03K 3/012, H03K 17/13, H03K 17/687, H03K 17/74, H02M 1/00, H03K 17/30. Active diode having improved transistor turn-off control method : Appl. N 14/898958 : Filed 25.04.2014 : Pub. 23.01.2018 : / Jong-Tae Hwang, Hyun-Ick Shin, Sang-O Jeon, Joon Rhee ; Assignee Maps Inc ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US9876497/en?oq=US9876497.html (дата обращения: ДД.ММ.ГГГГ).