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Pat. 9912225 United States, Int. Cl.22 H02M 1/32, B60L 11/18, H02M 7/538, H02M 7/5387, H03K 17/082, H02M 1/00, H03K 17/08. Method and system for overcurrent protection for insulated-gate bipolar transistor (IGBT) modules : Appl. N 15/011364 : Filed 29.01.2016 : Pub. 06.03.2018 : / Steven E. Schulz, David Tang, Silva Hiti, Hector Romo, Marc Haeberlin ; Assignee Faraday and Future Inc ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US9912225/en?oq=US9912225.html (дата обращения: ДД.ММ.ГГГГ).