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Pat. 9929281 United States, Int. Cl.22 H01L 21/84, H01L 27/105, H01L 27/12, H01L 29/24, H01L 29/66, H01L 29/786, H02M 3/07, H02M 3/158. Transisitor comprising oxide semiconductor : Appl. N 15/249570 : Filed 29.08.2016 : Pub. 27.03.2018 : / Shunpei Yamazaki, Hiroyuki Miyake, Masashi Tsubuku, Kosei Noda ; Assignee Semiconductor Energy Laboratory Co Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US9929281/en?oq=US9929281.html (дата обращения: ДД.ММ.ГГГГ).