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Pat. 9929652 United States, Int. Cl.22 H03B 1/00, H01L 29/20, H01L 29/78, H02M 3/158, H03K 3/00. GaN FET with integrated driver and slew rate control : Appl. N 15/373327 : Filed 08.12.2016 : Pub. 27.03.2018 : / Thomas Ribarich, Santosh Sharma, Ju Zhang, Marco Giandalia, Daniel Marvin Kinzer ; Assignee Navitas Semiconductor Inc ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US9929652/en?oq=US9929652.html (дата обращения: ДД.ММ.ГГГГ).