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Pat. 9941354 United States, Int. Cl.22 H01L 29/74, H01L 21/331, H01L 21/336, H01L 27/108, H01L 27/148, H01L 29/06, H01L 29/40, H01L 29/423, H01L 29/78, H01L 29/80, H02M 3/158, H01L 29/417. Semiconductor device comprising a first gate trench and a second gate trench : Appl. N 15/374254 : Filed 09.12.2016 : Pub. 10.04.2018 : / Britta Wutte, Sylvain Leomant ; Assignee Infineon Technologies Austria Ag ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US9941354/en?oq=US9941354.html (дата обращения: ДД.ММ.ГГГГ).