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Pat. 9966947 United States, Int. Cl.22 H02M 7/48, H01L 29/06, H01L 29/08, H02M 1/08, H02M 1/084, H02M 7/162, H03K 17/06, H03K 17/687. Gate driving circuit for insulated gate-type power semiconductor element : Appl. N 15/320658 : Filed 03.07.2014 : Pub. 08.05.2018 : / Kazuhiro Otsu, Junichiro Ishikawa ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US9966947/en?oq=US9966947.html (дата обращения: ДД.ММ.ГГГГ).