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Pat. 9991336 United States, Int. Cl.22 H01L 29/36, H01L 21/322, H01L 27/06, H01L 29/06, H01L 29/66, H01L 29/861, H02M 7/5395, H02P 27/08. Semiconductor device, method for manufacturing the same, and power conversion system : Appl. N 15/695670 : Filed 05.09.2017 : Pub. 05.06.2018 : / Masatoshi Wakagi, Taiga Arai, Mutsuhiro Mori, Tomoyasu Furukawa ; Assignee Hitachi Power Semiconductor Device Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US9991336/en?oq=US9991336.html (дата обращения: ДД.ММ.ГГГГ).