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Pat. 9997594 United States, Int. Cl.22 H01L 29/15, H01L 29/06, H01L 29/20, H01L 29/205, H01L 29/66, H01L 29/778, H01L 31/0256, H02M 3/335, H03F 1/32, H03F 3/19, H03F 3/21. Gallium nitride based high electron mobility transistor (GaN-HEMT) device with an iron-doped cap layer and method of manufacturing the same : Appl. N 15/272993 : Filed 22.09.2016 : Pub. 12.06.2018 : / Tetsuro Ishiguro, Atsushi Yamada, Norikazu Nakamura ; Assignee Fujitsu Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US9997594/en?oq=US9997594.html (дата обращения: ДД.ММ.ГГГГ).