Патент США № | 10320093 |
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Автор(ы) | Madsen и др. |
Дата выдачи | 11 июня 2019 г. |
In certain exemplary embodiments, register banks are used to allow for fast beam switching (FBS) in a phased array system. Specifically, each beam forming channel is associated with a register bank containing M register sets for configuring such things as gain/amplitude and phase parameters of the beam forming channel. The register banks for all beam forming channels can be preprogrammed and then fast beam switching circuitry allows all beam forming channels across the array to be switched to use the same register set from its corresponding register bank at substantially the same time, thereby allowing the phased array system to be quickly switched between various beam patterns and orientations. Additionally or alternatively, active power control circuitry may be used to control the amount of electrical power provided to or consumed by one or more individual beam forming channels such as to reduce DC power consumption of the array and/or to selectively change the effective directivity of the array.
Автор(ы): | Kristian N. Madsen (San Diego, CA), Wade C. Allen (San Diego, CA), Jonathan P. Comeau (San Diego, CA), Robert J. McMorrow (San Diego, CA), David W. Corman (Gilbert, AZ), Nitin Jain (San Diego, CA), Robert Ian Gresham (San Diego, CA), Gaurav Menon (San Marcos, CA), Vipul Jain (Irvine, CA) | ||||||||||
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Заявитель: |
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Патентообладатель: | ANOKIWAVE, INC. (San Diego, CA) |
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Идентификатор семейства: | 61240709 | ||||||||||
Номер заявки: | 15/253,426 | ||||||||||
Приоритет: | 31 августа 2016 г. |
Идентификатор патента | Дата публикации | |
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US 20180062274 A1 | Mar 1, 2018 | |
Действующий класс US: | 1/1 |
Действующий класс СПК: | H01Q3/26; H01Q3/24; H04B7/0617; H01Q21/22; Y02D30/70 |
Действующий класс МПК: | H01Q3/24; H01Q21/22 |
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